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inchange semiconductor product specification silicon npn power transistors 2SC3420 description ? ? with to-126 package ?high dc current gain ? low saturation voltage ? high collector power dissipation applications ? storobo flash applications ?medium power amplifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 50 v v ceo collector- emitter voltage open base 20 v v ebo emitter-base voltage open collector 8 v i c collector current 5 a i cm collector current-peak 8 a i b base current 1 a t a =25 ?? 1.5 p c collector power dissipation t c =25 ?? 10 w t j junction temperature 150 ?? t stg storage temperature -55 ?? +150 ??
inchange semiconductor product specification 2 silicon npn power transistors 2SC3420 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit i cbo collector cutoff current v cb =40v;i e =0 100 na i ebo emitter cutoff current v eb =8v;i c =0 100 na v (br)ceo collector-emitter breakdown voltage i c =10ma ;i b =0 20 v v cesat collector-emitter saturation voltage i c =4a ;i b =0.1a 1 v v be base-emitter voltage i c =4a ; v ce =2v 1.5 v h fe-1 dc current gain i c =0.5a ; v ce =2v 140 600 h fe-2 dc current gain i c =4a ; v ce =2v 70 c ob output capacitance i e =0; v cb =10v;f=1mhz 40 pf f t transition frequency i c =0.5a ; v ce =2v, 100 mhz ? h fe-1 classifications y gr bl 140-240 200-400 300-600
inchange semiconductor product specification 3 silicon npn power transistors 2SC3420 package outline fig.2 outline dimensions
inchange semiconductor product specification 4 silicon npn power transistors 2SC3420

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